Characterization and fabrication of ZnSe epilayer on porous silicon substrate

Abstract

This paper reports the development of a ZnSe epilayer onto porous silicon with a chemical vapor deposition (CVD) system to obtain a single crystal ZnSe epilayer on a silicon substrate for low cost short wavelength device applications. The ZnSe single crystal epilayer was successfully grown onto porous silicon. The optimized silicon substrate anodization conditions for ZnSe epitaxial growth are J=40 mA/cm 2, HF/C 2H 5OH=5:5 for the n-substrate and J=30 mA/cm 2, HF/C 2H 5OH=3:2 for the p-substrate. The PL spectrum of the ZnSe single crystal epilayer at 10 K has four peaks located at 444 nm (2.793 eV), 457 nm (2.718 eV), 478 nm (2.594 eV), and 574 nm (2.16 eV), respectively.