Characterization and electrochemical deposition of natural melanin thin films

Abstract

Melanin is an important class of biological pigments because of its distinct chemical and physical properties. The electrochemical deposition of natural melanin thin films was studied using two different techniques; constant potential and cyclic voltammetry along with a deposition time of five hours. The thin films deposited electrochemically on a fluorine-doped tin oxide conductive glass substrate using the constant potential method, exhibited faster growth rate and better adhesion to the fluorine-doped tin oxide working electrodes than those deposited using the cyclic voltammetry method. The thin films deposited on the fluorine-doped tin oxide conductor glass using the constant potential method were also more homogeneous than those deposited via the cyclic voltammetry technique. The increase of film thickness is related to the increase of electrochemical deposition time. Interestingly, the electrochemical deposition using the constant potential method had the advantage of consuming less electric charge. The physical and chemical structures of the melanin thin films were characterized using ultraviolet–visible absorption spectroscopy, Fourier-transform infrared spectroscopy, and X-ray diffraction analysis. The ultraviolet–visible absorption spectra showed the correlation between the variation of deposition rates of melanin and the type of electrochemical technique employed as well as the thickness of the film. The average thickness of the film is 500 nm which absorb 40% of light in both type of films. The atomic force microscopy images illustrated the homogeneous deposition of the melanin molecules on the fluorine-doped tin oxide conductive glass substrate, indicating that the thickness of the thin films can be controlled. We estimated an average grain size of 14.093 Å. The ease of preparing such thin films of organic materials can open new avenues towards the use of soft conductors, in contrast to the complex preparation of industrial semiconductors.