Abstract
This paper describes a comparison between capacitance-voltage (CV) and spectral ellipsometry (SE) measurements of the dielectric constant of fluorinated amorphous carbon films. Whereas CV measurements require the construction of metal-insulatorsemiconductor (MIS) structures, SE measurements can be made on as-deposited films, and are much easier to implement. An examination of the results indicate that under certain conditions, the SE measurements give values that are in reasonable agreement with the more direct measurements based on the electrical (CV) response of the dielectric layer. The films reported on here had dielectric constants ranging from 3 – 5, and, in some cases, show promising characteristics for use as low-k dielectrics in semiconductor devices.
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