Abstract
ZnPc thin films were prepared by pulsed laser deposition (KrF laser, λ = 248 nm, τ = 5 ns, f = 50 Hz) on suprasil substrates in vacuum. Optical properties in UV–Vis spectral region were analyzed as functions of laser fluence from 40 to 100 mJ/cm2 by spectrophotometric and spectral ellipsometry measurements. The spectral ellipsometry data were treated using a three-layer model (substrate, film, roughness). The best results of data fitting were obtained when Q band was characterized by two Lorentz oscillators, while two Gaussian oscillators were used for B and C band fitting. We derived the band gap using Tauc plot considering ZnPc a direct band gap semiconductor. The band gap values were found decreasing from 3.13 to 3.09 eV with increasing laser fluence, which might be related with formation of trapping sites at higher fluence.
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