Abstract
Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 1014 cm−3, a mobility of approximately 300 cm2·V−1·s−1, and a resistivity of approximately 102 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF:H2O2:H2O etchant. Textures with the sizes of approximately 1 µm were produced on {100}, {110}, and {111}Zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.
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