Abstract
We investigated material and electrical properties of ZrO 2 films deposited by atomic layer deposition (ALD) using Zr t-butoxide and water (H 2 O). As-deposited ZrO 2 films show 2.4nm of CET measured at 100kHz with frequency dispersion and high leakage current (3A/cm2) at 1V. These undesirable properties may results from metallic Zr and carbon contamination in the films. The post-deposition annealing was performed in an O 2 ambient at 500 to improve the capacitance and reduce the leakage current. ZrO 2 films deposited by ALD and annealed at 500C exhibit CET(Capacitance Equivalent Thickness) of 2nm without dispersion issues and leakage current less than 10 m 3 A/cm 2 at 1V.
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