Abstract
In this study, Er doped ZnO based semiconducting nano thin films are produced by the sol-gel technique using dip coating method which is widely used method for preparing nano size materials. 〖Zn〗_(1-x) 〖Er〗_x O thin films are prepared different coating thickness using different solvent. The effect of the Er doping and film thickness on structural, electric and optic properties of the ZnO semiconducting nano thin films are investigated in detail and compared with undoped sample which prepared in same conditions. X-ray diffraction analysis (XRD) has been used to determine phase and lattice parameters of the semiconducting thin films and scanning electron microscope (SEM) measurements are made for microstructure properties. The resistivity measurement for electrical properties and transmittance measurement for optic properties have been carried out.
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