Abstract
Characteristics of Zn diffusion in patterned InP substrates was investigated and compared with that of Zn diffusion in InP planar substrates. The activation energy of diffusion coefficient was 1.3∼1.4 eV in both patterned and planar diffusion, which indicates that there is no difference in the diffusion mechanism and that the diffusion was controlled by an interstitial-substitutional mechanism. The diffusion coefficient in patterned substrates was smaller than that in planar substrates when a Si 3N 4 encapsulation layer was employed. As the Si 3N 4 encapsulation layer thickness increased, the diffusion coefficient decreased in both planar and patterned substrates. But, the diffusion coefficient showed little dependence on the thickness of the SiO 2 encapsulation layer in both patterned and planar substrates.
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