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Abstract
The growth of amorphous silicon whiskers grown by thermal decomposition of silane (SiH4) in the temperature range between 500 and 800°C in an argon atmosphere has been investigated in detail. A thin gold film (about 200 Å) on the substrate seems to act as the most effective catalyzer for the whisker growth. The time rate of axial growth at the beginning of each growth curve seems to be proportional to the partial pressure of SiH4. Radial growth proceeds at a constant rate and remains constant even after termination of the extension in length. The two mechanisms of elongation and thickening are controlled by independent activation processes whose activation energies are 0.73 eV and 2.1 eV respectively.
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