Abstract
Summary form only given.Indium aggregation and phase separation due to the lattice mismatch between GaN and InN lead to the formation of localized states. It was widely accepted that the photoluminescence (PL) in InGaN samples and the output from a light-emitting diode came from the recombination of localized excitons. Several stimulated emission (SE) studies have led to the conclusion that their measured stimulated emission (SE) also originated from band-filled localized states. In this paper, we report a two-peak feature of SE from InGaN-GaN quantum well samples.
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Schedule a callMore From: Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088)
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