Abstract
Tin dioxide (<TEX>$SnO_2$</TEX>) thin films were prepared on Si(100) substrate by PE-ALD using the <TEX>$DBDTA((CH_{3}CO_2)_{2}Sn[(CH_2)_{3}CH_3]_2)$</TEX> Precursor. The properties were studied as a function of source temperature, substrate temperature, and purging time. Scanning probe microscopic images at the source temperature <TEX>$50^{\circ}C$</TEX> and the substrate temperature <TEX>$300^{\circ}C$</TEX> shows lower roughness than those <TEX>$40/60^{\circ}C$</TEX> source and <TEX>$200/400^{\circ}C$</TEX> substrate temperature samples. The purging time for optimum process was 8sec and the deposition rate was about 1 nm per 10 cycles. The conductance of <TEX>$SnO_2$</TEX> thin film showed a constant region in the range of <TEX>$200^{\circ}C\;to\;500^{\circ}C$</TEX>. The thin films deposited for 200 cycle show a better sensitivity to CO gas.
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