Abstract
The main parameters of chromium films used for preparation of photomasks for microelectronics have been investigated. The changes of pinhole density, the wear resistance and the etching time of layers obtained by thermal evaporation, electron beam evaporation and radio-frequency sputtering have been followed. Comparison of the characteristics of chromium films deposited by evaporation using chromium of different grades of purity and shape of the particles has been made. Analysis of the film composition has been carried out by SIMS and AES methods. It has been shown that chromium coatings with minimum pinholes and very good wear resistance can be obtained on substrates of soda-lime glasses for photoplates.
Published Version
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