Abstract
The thermal annealing characteristics of radiation damage in p-channel MOSFETS due to irradiation by 1.5 MeV electrons as a function of time and temperature are presented. Both isothermal and isochronal annealing curves are analyzed and it is found that the activation energy of the annealing processes has a distribution in a range of 1 eV with the peak at about 1 eV. The mechanism of radiation damage and the model of thermal annealing in the MOSFETS are discussed.
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