Abstract
The work is concerned with the efficiency of inclusion of the additional layer of por-Si applied as a buffer into the growth technology of AlxGa1-xN/AlN/Si as well as its influence on the morphological parameters and composition of surface of the grown heterostructures. In the course of the study, it was found that the heterostructure grown using a nanoporous por-Si buffer layer on a Si(111) n-type monocrystalline silicon wafer has a more homogeneous structure of the epitaxial layer and its surface morphology.
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