Characteristics of the GaAs monolayer-doped structure and its applications for power field-effect transistor fabrication

Abstract

An ultimate artificial doping technique, to give a monolayer-doped (delta-doped) structure has been studied in this paper. First, two different methods, i.e., the Airy function and a modified analysis model, were used to simulate the theoretical properties of the monolayer-doped structure. By considering the free-carrier effect in each subband, the theoretical values of the modified-analysis method are consistent with the experimental results reported by other researchers. On the basis of theoretical analysis, a field effect transistor (FET) with a monolayer-doped channel has been fabricated successfully. Because of the high gate breakdown voltage and high output drain current capability, the monolayer-doped FET studied is suitable for power applications.