Abstract
The sputter deposition of TiN, ZrB 2 and W 2B thin films were studied in order to develop the process parameters for advanced metallizations to GaAs devices. Thin films of TiN, ZrB 2 and W 2B were deposited on both bare and AuZn-metallized (100) GaAs substrate in magnetron sputtering systems. The resistivity and stress in as-deposited thin films were examined and related to deposition conditions. The film microstructure and composition of grown compounds were determined by X-ray diffraction, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). It was observed that metal boride films were polycrystalline or amorphous depending on the sputtering conditions. Diffusion barrier properties were analyzed by Rutherford backscattering spectroscopy (RBS) technics.
Published Version
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