Abstract
SiO 2-like thin films were deposited using a modified dielectric barrier discharge with a gas mixture of hexamethyldisilazane (HMDS)/O 2/He/Ar and their film characteristics were investigated as functions of the HMDS and O 2 flow rates. As the HMDS flow rate was increased, higher amounts of Si–(CH 3) x bonds and lower amounts of Si–OH bonds were observed in the deposited SiO x , due to the increase in the amount of the less dissociated HMDS, which also caused an increase of the surface roughness. The addition and increase of the oxygen flow to HMDS/He/Ar brought the stoichiometry of SiO x close to SiO 2 and decreased the surface roughness by decreasing the amount of Si–(CH 3) x bonds through the increased decomposition and oxidation of HMDS, even though the deposition rate was decreased. However, when the O 2 flow rate was higher than a certain threshold, the surface roughness increased again, possibly due to the decrease in the extent of HMDS dissociation caused by the decreased plasma density at the higher oxygen flow rate. By using an optimized gas mixture of HMDS (150 sccm)/O 2 (14 slm)/He (5 slm)/Ar (3 slm), SiO 2-like thin films with a very low impurity level and having a smooth surface could be obtained with a deposition rate of approximately 42.7 nm/min.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
