Abstract
A conventional plasma-enhanced chemical vapour deposition (PECVD) system with a stainless steel mesh attached to a cathode was used to fabricate an SiC-based thin-film light-emitting diode (TFLED) at a low temperature (/spl sim/180/spl deg/C). The obtained TFLED had a brightness (B) of 1060 cd/m/sup 2/ at an injection current density (J) of 600 mA/cm/sup 2/ and a threshold voltage (V/sub th/) of 12.6 V, which were much better than those of 330 cd/m/sup 2/ and 18.5 V for an amorphous SiC-based TFLED fabricated by the same PECVD system without a stainless steel mesh.
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