Characteristics of secondary ions and their impact on single-event upset in TMD devices under proton irradiation

Abstract

Transition metal dichalcogenide (TMD) materials are emerging candidates for next-generation electronics due to their unique properties, such as high carrier mobility and on/off ratios. However, their introduction may significantly alter single-event effects (SEEs) in devices compared to traditional silicon devices. This work investigates the SEE sensitivity of TMD devices under proton irradiation using the Geant4 simulation toolkit. Secondary ions generated by proton irradiation of TMD devices with different proton energies were simulated and analyzed. The energy deposition in the device's sensitive volume array was also examined. The results show that TMD devices are more susceptible to SEEs than silicon devices, and that their SEE sensitivity depends on the TMD material, proton energy, and critical charge. These findings provide valuable insights into the aerospace application of TMD material devices and the design of radiation-hardened TMD-based electronics.