Abstract
The secondary electron emission coefficient (γ) and sputtering yield of the MgAl2O4/MgO protective layer has been investigated using γ-focused ion beam (γ-FIB) and focused ion beam (FIB) systems, respectively. The MgAl2O4/MgO protective layer has higher γ values (from 0.09 to 0.12) than the single MgAl2O4 protective layer (from 0.06 to 0.07) at Ne+ ion energies ranging from 90 to 200 eV. Also it has been found that the secondary electron emission coefficient (γ) of the MgAl2O4/MgO protective layer is similar to that of the MgO protective layer. Moreover, the MgAl2O4/MgO protective layer has been found to have lower sputtering yields (from 0.25 to 0.35) than the MgO protective layer (from 0.36 to 0.44) for Ga+ ion energies ranging from 10 to 14 keV.
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