Characteristics of pulse electrodeposited AgGaS2 thin films for photovoltaic application

Abstract

In this work, AgGaS2 thin films are investigated and their applications in photovoltaic cells is attempted. Less porosity and fine grains formed by pulse plating technique compared to dc plating technique. The film thickness measured by surface profilometer and its ranging from 500 to 950 nm with increase in duty cycle. The single-phase polycrystalline nature noticed in X-ray diffraction pattern. Composition of films estimated by Energy dispersive X-ray analysis (EDAX). In XPS studies, peaks in the Ag 3d spectrum at 367.34 eV and 373.42 eV could be the binding energies of Ag3d5/2 and Ag3d3/2, respectively. At 1146 eV and 1118 eV, respectively, the peaks of Ga 2p1/2 and Ga 2p3/2 were noted. At 162.1 eV and 153.1 eV, the sulphur doublet occurred. AFM studies observed that the grain size and surface roughness decreases as the duty cycle increases. The transport properties at room temperature measured, the film resistivity and mobility increased with increase of duty cycle. The carrier density decreases with duty cycle increases. Studies of photo electrochemical cells showed an efficiency of 5.85%. Mott-Schottky plots yield a flat band potential ranging from 0.8 V to 1.00 V in the range of (SCE). The film showed p-type conductivity.