Abstract
The Pt/YMnO3/Y2O3/Si structure for a metal/ferroelectric/insulator/semiconductor (MFIS) field effect transistors was fabricated and the effect of a Y2O3 layer on the properties of MFIS structure was investigated. The Y2O3 thin films on p-type Si(111) substrate growth by pulsed laser deposition were crystallized along (111) orientation irrespective of the deposition temperatures. Ferroelectric YMnO3 thin films deposited directly on p-type Si (111) by metalorganic chemical vapor deposition resulted in a Mn deficient layer between Si and YMnO3. However, YMnO3 thin films having good quality and stoichiometric composition can be obtained by adopting a Y2O3 buffer layer. The memory window of the YMnO3 thin films with a Y2O3 film is greater than that of the YMnO3 thin films without a Y2O3 film after the annealing at 850 °C in vacuum ambient (100 mTorr). The memory window is 1.3 V at the applied voltage of 5 V.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
