Characteristics of plasma parameters in sputtering deposition using a powder target

Abstract

Fabrication mechanisms of functional thin films prepared using a sputtering deposition method with metal-based powder targets were examined and profiles of electron density and emission intensity in the processing plasma were investigated. The electron density and electron temperature were 0.5 × 109 to 3 × 109 cm−9 and 0.5 to 1.5 eV, respectively. The radial profiles of the electron density were almost uniform, but the electron density and temperature at the edge of the electrode were higher than those at the center near the powered electrode. Axial profiles suggested that the electron density was the highest at the plasma/sheath boundary. The profile shape using a powder target was almost the same as that using a bulk target.