Abstract
Recent progress in the investigation of the material parameters of Al/Al2O3systems leads to an increase in the possibilities for using embedded TaOXN1‐X layers. The use of Al‐sheets as mechanical strength carriers in combination with vacuum‐deposited Al‐layers and electrochemically anodized Al2O3 structure requires study. This was found to create a periodic multilayer Al/Al2O3 structure. The material qualities of this system allow optimization in order to achieve high speed data processing and signal propagation. The existing studies using Al and Ta combination as well as the high resistance qualities of the modified TaOXN1‐X layers have shown satisfactory results. It can be concluded that the development of this new layer combination is possible in the multilayer carrier structures. Some preliminary research studies show a proper adhesion and satisfactory characteristics of the two integrated resistive planes in the multilayer combination Al/Al2O3//TaOXN1‐X/Ta2O5/Al.
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