Abstract
Characteristics of organic film deposited by plasma-enhanced chemical-vapor deposition (CVD) at temperatures below 250°C using a liquid source of benzocyclobutene (BCB) resin were investigated and compared with standard spin-coated BCB film. CVD film with a thickness of 0.3μm was successfully deposited on a 3in. wafer with a thickness uniformity of 3%. The dielectric constant, breakdown voltage, stress, and moisture absorption of the CVD film are similar to those of spin-coated film. However, using Fourier transform infrared spectroscopy, Auger electron spectroscopy, and pyrolysis gas chromatography/mass spectroscopy, it was found that the CVD film has almost no methyl-siloxane, which exists in spin-coated film. Therefore, CVD film can be etched by reactive-ion etching using only O2 gas. The step-coverage of the CVD film is conformal and considered advantageous for use in ultrafine structures.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
