Abstract
NiCr thin films were fabricated by rf magnetron sputtering for applying to both the top electrode and absorption layer on Pb(Zr, Ti)O(PZT) thin films for infrared sensors. The rms roughness and resistivity of NiCr films prepared with Ni power of 80 W and Cr power of 50 W showed the most stable oxidation resistance after annealing at for 5 min in oxygen ambient. The rms roughness and resistivity of NiCr films annealed at in oxygen ambient were about 2 and Ω-cm, respectively. As-deposited Ni/PZT/Pt and NiCr (Ni 80 W, Cr 50 W)/PZT/Pt structures showed well saturated hysteresis loops. However, in case of the samples annealed at in oxygen ambient, only NiCr/PZT/Pt showed saturated loops having a remanent polarization of C/. Ultra-thin NiCr films showed a possibility as a top electrode for infrared sensors.
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