Abstract
NbN/AlN/NbN tunnel junctions and junction arrays were fabricated on single-crystal MgO and Si substrates for the basic investigation of all-NbN superconductor integrated circuits operating at 10 K. The electrical characteristics of single junctions and junction arrays were measured in a wide temperature range of 4.2-15 K. There is almost no recognizable difference in junction characteristics when the operating temperature is varied from 4.2 K to 10 K. The junctions demonstrated a very good junction quality with a high gap voltage (Vg = 4.8 mV), large IcRN products (IcRN = 2.5 mV) and a small subgap leakage current (Rsg/RN = 6) at 10 K. NbN/AlN/NbN junction arrays were fabricated for estimating the nonuniformity of the junction parameters. Ic nonuniformity for a 200-junction array with a high current density (Jc = 11 kA cm-2) was less than ±2% (1).
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