Abstract
To improve reproducibility of full-epitaxial NbN/MgO/NbN tunnel junctions, we fabricated junctions using an ion-beam sputtered MgO tunnel barrier. The tunnel junctions were fabricated on single-crystal MgO(1 0 0) substrates and X-ray analysis showed that all the layers of NbN/MgO/NbN forming the junction had been epitaxially grown. The junctions showed good tunneling characteristics, with large gap voltages and small subgap leakage currents. The junctions were fabricated in the range of R N A products of 25–26,000 Ω μ m 2. By using ion-beam sputtering, the stability of the MgO tunnel barrier’s deposition rate could be increased and the controllability of the barrier thickness was improved.
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