Abstract
Abstract The structural and photoelectric characteristics of thin ZnO, TiO2, and SiO2 sol-gel films on the black silicon (b-Si) surface have been studied. The cross-section and top-view morphology of the b-Si and thin films was observed by a scanning electron microscope and atomic force microscope. Measurement of photoelectric characteristics (current-voltage and capacitance-voltage) was carried out under the influence of laser and UV radiation of different wavelengths. It has been demonstrated that sol-gel films precisely reproduce the morphology of the b-Si surface without any voids or inclusions. It has been shown that it is preferable to use ZnO and TiO2 films as passivating and protective films of solar cells based on b-Si, which have stable structural and optical properties and, at least, do not worsen the reflection of b-Si in the near infrared and visible regions of the solar radiation. Only samples with a TiO2 film have a noticeable photosensitivity.KeywordsBlack siliconSol-gel filmMorphologyPhotoelectric characteristicsSolar cells
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