Abstract
A systematic experimental study of metal/tunnel-oxide/ N/P + (MISS) devices is presented. Measurements on two-terminal devices suggest that the current-voltage characteristics are strongly dependent on tunnel-oxide area. Based on this data, it is concluded that this phenomenon is a result of current fringing which is expected to dominate for small-area devices (i.e. large perimeter-to-area ratio PAR). This is confirmed by measurements on devices with a constant area but varying PAR. Furthermore, the above observations are consistent with the regenerative feedback mechanism (responsible for initiating the switching process) being dependent on PAR. As a consequence of the results presented in this paper, the punch-through (PT) mode of operation described by Simmons et al.[1–3] is put into perspective. The conditions necessary for ideal PT switching to occur are clearly defined in terms of device parameters; in particular, area and area-to-perimeter ratio, tunnel-oxide thickness, and the effects of fabrication processes. Furthermore, it is shown that the current-voltage characteristic of the MISS device can be influenced by the field-oxide thickness and the frequency of the measurement signal. All the above-mentioned factors will determine whether ideal punch-through behaviour is observed.
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