Abstract
Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni 16Fe 62Si 8B 14 free layers, were investigated. NiFeSiB has a lower saturation magnetization ( M s: 800 emu/cm 3) than Co 90Fe 10 and a higher anisotropy constant ( K u: 2700 erg/cm 3) than Ni 80Fe 20. By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field ( H sw) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced.
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