Abstract
In a program of developing radiation-hard silicon sensors for the LHC-ATLAS experiment, we have irradiated various types of silicon sensors with 12 GeV protons at KEK. Among the other properties, we made a comparative study of characteristics of the sensors with two wafer planes 〈1 1 1〉 and 〈1 0 0〉 . The studied sensors are p-on-n type, which satisfy the ATLAS-SCT specifications. Possible dependence on the substrate orientation could result from different dangling-bond configurations. The compared characteristics are the charge collection efficiency, interstrip capacitance, and noise levels. The noise levels were measured with a real ATLAS-SCT electronics system. A substantial difference is observed in the interstrip capacitance at ∼10 kHz , while the difference is small at >1 MHz . The differences in the charge collection efficiency and in the noise levels appear to be small.
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