Abstract
Gd 2O 3 films are electron beam (e-beam) evaporated on GaAs at room temperature. The bonding natures of the Gd 2O 3/GaAs interface are characterized using Auger electron spectroscopy and X-ray photoelectron spectroscopy. LMM Auger lines clearly demonstrate the oxide-related chemical state. After the deposition of Gd 2O 3 on S-passivated GaAs, GaAs oxides were not formed at the interface but the generation of interfacial excess As is observed. The generation of elemental excess As can be explained by the dissociation of As–S bonds. However, interfacial modification could be minimized through in situ thermal hydrogenation of S-passivated GaAs before Gd 2O 3 deposition. The high-frequency capacitance–voltage ( C–V) measurements showed an effective decrease of the interface state. The characteristics of deposition-induced interfacial modification and bonding distribution in Gd 2O 3/GaAs interface are discussed.
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