Abstract
We have fabricated interface-engineered junctions with YbBa2Cu3Oy as the counterelectrode. The junctions fabricated on YBa2Cu3Oy base electrodes exhibited excellent Josephson characteristics with the 1σ-spread in Ic as low as 5.4% for 16 junctions with an average Ic of around 1 mA. We also confirmed that the 1σ in Ic correlates with the surface morphology of the base-electrode layer, indicating that further improvements in 1σ would be possible by advancing the thin-film growth technology.
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