Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur passivation

Chun-Yuan Chen Chun-Yuan Chen,Ssu-I Fu Ssu-I Fu,Ching-Hsiu Tsai Ching-Hsiu Tsai,Chi-Yuan Chang Chi-Yuan Chang,Wen-Chau Liu Wen-Chau Liu

doi:10.1109/ivesc.2004.1414218

Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur passivation

Chun-Yuan Chen Chun-Yuan Chen, Ssu-I Fu Ssu-I Fu + Show 3 more

https://doi.org/10.1109/ivesc.2004.1414218

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Publication Date: Sep 6, 2004

Citations: 2

Affiliation: National Cheng Kung University

#Sulfur Treatment #Heterojunction Bipolar Transistors + Show 8 more

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Abstract

The temperature-dependent DC characteristic of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur passivation are studied and demonstrated. The device with sulfur treatment can be operated under extremely low collector current (I/sub C/*cong;10/sup -11/A) region, which offers the promise for low-power electronics applications. It is known that, from experimental results, the too long time for sulfur treatment is not necessary. In this work, 12 minutes of sulfur treatment is an appropriate choice. Furthermore, the studied devices with sulfur treatment can remarkably reduce the collector-emitter offset voltage /spl Delta/V/sub CE/.

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