Abstract
Room temperature (RT) pulsed operation of blue (420nm) nitride-based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates has been demonstrated. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In0.21Ga0.79N (2.5nm)/In0.07Ga0.93N (5nm) InGaN MQW. Threshold current densities as low as 12.6kA/cm2 were observed for 10×1200μm lasers with uncoated reactive ion etched (RIE) facets. The emission is strongly TE polarized and has a sharp transition in the far-field pattern above threshold. Laser diodes were tested under pulsed conditions lasted up to 6h at room temperature.
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