Abstract
Hydrogenated amorphous silicon (a-Si:H) thin film transistors with channel lengths of 30 μm and with channel widths of 500 μm were made using d.c. magnetron sputtering. By optimizing the fabrication process, an “on” current of about 10−5 A and an off current of about 10−12 A were obtained. We studied the influence of the thickness of the intrinsic layer and the influence of the hydrogen contents in the a-Si:H and in the hydrogenated amorphous silicon nitride (a-SiNx:H) films mainly on the on current and on the extended state mobility. The optimal thickness of the insulating layer was determined to be 0.1 μm and the hydrogen contents to be 19% in a-Si:H and 10% in a-SiNx:H. The maximum mobility attained was 0.55 cm2 V−1 s−1.
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