Abstract
High threshold voltage low loss 600 V 4H-SiC MOSFETs have been fabricated successfully using a re-oxidation technique for gate oxides and an n-type doping in the Junction Field Effect Transistor region of the MOSFET with shrunk MOS cells. The MOSFET has exhibited a high threshold voltage of more than 4 V and a low specific on resistance of 5.2 mΩ·cm2 at 25 °C. The MOSFET has also exhibited a sufficient blocking characteristic at VG of 0 V at 150 °C. High speed switching with low switching losses has been demonstrated successfully using the MOSFET at 150 °C.
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