Characteristics of heavily doped p+∕n ultrashallow junction prepared by plasma doping and laser annealing

Abstract

High quality p+∕n ultrashallow junctions were fabricated by high dose plasma doping and two step annealing involving low-temperature furnace annealing and excimer laser annealing. Without a preamorphization process, laser annealing is effective in terms of activation and annealing. Meanwhile, the junction depth can be controlled by the low-temperature annealing process prior to the laser annealing. By combining low-temperature preannealing and laser annealing, ultrashallow (junction depth ∼22nm), low sheet resistance (∼275Ω∕sq.), and a defect-free p+∕n junction can be obtained without preamorphization.