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Abstract
An n + /p germanium (Ge) ultrashallow junction formed by PH 3 plasma doping (PLAD) and KrF excimer laser annealing is demonstrated. In order to improve the n-type dopant activation without significant diffusion in the n + /p-Ge junction, we applied laser annealing on the PLAD samples. Compared with rapid thermal annealing (RTA), the laser annealing yielded shallower junction depth (∼15 nm) with low sheet resistance and comparable leakage current characteristics in the Ge n + /p junction. Therefore, PLAD with laser annealing can be considered as an alternative method for fabricating future Ge metal-oxide-semiconductor field-effect-transistors.
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