Characteristics of graded-like multiple-delta-doped GaAs field effect transistors

Abstract

Multiple-δ-doped GaAs field effect transistors using graded-like δ-doping profile are demonstrated and investigated. An extremely high carrier density of 1.2×1013 (7.9×1012) cm−2 along with an enhanced Hall mobility of 1700 (3300) cm2/v s at 300 (77) K for a triple-δ-doped GaAs structure are achieved. The dc characteristic reveals an extrinsic transconductance as high as 110 mS/mm at room temperature with a gate length of 2 μm. Three separated peaks in the transconductance versus gate bias curve are observed. Meanwhile, a broad and flat transconductance region is obtained.