Abstract
Schottky diode junctions were formed between nanowires of cadmium sulfide and nanowires of gold, through sequential cathodic electrodeposition into the pores of anodized aluminum oxide (AAO) templates. Lengths of CdS and Au nanowires were 100–500 nm and 300–400 nm respectively, while the diameter was 30 nm, each. Analysis of Schottky diodes yielded an effective reverse saturation current ( J o), of 0.32 mA/cm 2 and an effective diode ideality factor ( A) of 8.1 in the dark. Corresponding values under one sun illumination were, J o = 0.92 mA/cm 2 and A = 10.0. Dominant junction current mechanisms are thought to be tunneling and/or interface state recombination.
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