Abstract
Arsenic doped p-type ZnO films are prepared by the photo-assisted metal organic chemical vapor deposition method. Using the photo-assisted technique, the acceptor activation process is simplified. The arsenic doping level, which decides the carrier distribution, could be controlled by changing the thickness of the pre-deposited GaAs layer. The crystal and optical quality of the ZnO films is good. The acceptor is AsZn–2VZn. Its ionization energy could be slightly reduced by increasing the arsenic doping level. This finding is very helpful to improve the hole concentration. Our experiments provide a new method to grow high performance p-type ZnO based photoelectric devices.
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