Abstract
A cost-effective technique was introduced to prepare hafnium-titanium dioxide thin film, which was fabricated by anodic oxidation (anodization) of stacked Hf and Ti metals at room temperature in deionized water. Using the anodization method, the linearity of -gate ion-sensitive field-effect transistor (ISFET) was excellent between the pH 2 and 10 range. In addition, capacitor structure is prepared to characterize the capacitance-voltage and current-voltage curves using high-frequency and measurements, as well as X-ray photoelectron spectroscopy, was also examined to characterize the structural composition.
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