Abstract
We demonstrate simultaneous electrical and optical modulations of the first GaN/InGaN quantum-well light-emitting transistor (QW-LET) which contains an In0.15 Ga0.85N QW in the heavily p-doped In0.05 Ga0.95N base. Unlike GaAs/InGaAs counterparts, the GaN/InGaN QW- LET has a current gain (up to 5) and optical power which increases linearly with the base current. Its emission spectra are centered at a wavelength of 420 nm and barely shift with the current injection, in contrast to the behavior of typical nitride-based LEDs. The unusual features of this device may be related to the tilted band profile induced by the polarization field in the QW and issue of p-type doping.
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