Abstract
ABSTRACT The Bi3.25La0.75Ti3O12 thin films with a buffer layer of Bi4Ti3O12 thin film are deposited on p-Si(100) substrates by Sol-Gel method. The P-E hysteresis loops and current-voltage curve of the Bi3.25La0.75Ti3O12/Bi4Ti3O12 film system are measured respectively. The results are performed and discussed.
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