Abstract
In this paper, we present a combined charge-pumping measurement method for charge distribution profiling in charge-trapping memory. Electron and hole distributions after channel hot electron (CHE) or channel-initialed secondary electron (CHISEL) programming and band-to-band tunneling hot hole (BBHH) erasing are accurately determined. It is shown that BBHH-induced hot holes distribute in a narrow region near the drain junction, and cannot neutralize all the electrons particularly in CHISEL-programmed devices. The influence of the BBHH erasing condition on the width of hole distribution is demonstrated, and the effects on the characteristics of erasing speed and P/E cycling endurance are investigated and analyzed. It is shown that in the CHE-programmed devices, the erasing speed can be enhanced and endurance characteristics can be improved if a high drain voltage is used during erasing operation.
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