Abstract

This chapter contains sections titled: Introduction Basics of Program and Erase Operations Flash Memories with Channel Hot-Electron (CHE) Program and Tunnel Oxide Erase Flash Memories with Channel Hot-Electron Program and Poly-To-Poly Erase Flash Memories with Fowler-Nordheim Tunnel Program and Erase Special and Advanced Cell Structures Flash Reliability Issues Process Technology Memory Circuitry Flash Applications Conclusions and A Look into the Future Acknowledgments This chapter contains sections titled: References

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