Abstract
Characteristics of An/n-InP Schottky junctions formed onn-InP treated with hydrogen (H2)-and phosphine (PH3)-plasmas have been investigated. An enhancement of the barrier height up to 0.7 eV or more is observed for Schottky junctions processed sequentially with plasma treatment, laboratory air oxidation and Au evaporation. From the measurement of Schottky junctions formed by in-situ metallization immediately after H2-plasma treatment, it is found that laboratory air oxidation permits an increase in the barrier height by about 0.1 eV. The annealing experiment of Schottky junctions treated with plasma reveals that the substantial part of the barrier height enhancement is caused by release of the Fermi level pinning due to hydrogen passivation of surface defects. Although both H2- and PH3-plasmas are effective in enhancing the barrier height, PH3-plasma is preferable in respect to minimizing plasma-induced damage. In the case of H2-plasma treatment deep electron traps with activation energies of 0.21 and 0.51 eV below the conduction band are generated at and/or near the surface of InP, while these traps are not detected after PH3-plasma treatment.
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