Abstract
The authors demonstrate the effects of incorporating a phosphorescent, shallow hole trap in an organic light-emitting diode. They present device properties as a function of trap concentration including electron only, hole only, and bipolar current-voltage (I-V) characteristics, electroluminescence (EL) and photoluminescence spectra, and diode quantum efficiency. They specifically considered poly(9,9-dioctylfluorene) doped with an Ir phosphor. Built-in potential and I-V measurements were used to determine that the phosphor is a shallow trap. The EL spectrum is dominated by phosphor emission for concentrations above 0.1wt%. The effects of incorporating the phosphor are shown to be consistent with quasiequilibrium statistics.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
